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The Transistor that smashed a frequency barrier
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Titolo: The transistor that smashed a frequency barrier

Dimensione file: 1,4 MB (2450x3369 pixel)

Tipo del contenuto: pagina di rivista o giornale

Fonte pubblicazione: Scientific American

Data della fonte: 1956-02

Linguaggio: en (English)

Marca del contenuto: Bell Telephone Laboratories  

Caricato da: Maverich il 29-09-2019
Testo originale: The Transistor that smashed a frequency barrier
(Experimental model of Bell's new high-frequency transistor. It has a cut-off frequency of at least 500 mc and can be used to amplify 2500 independent voices simultaneously.)
A new transistor invented at Bell Telephone Laboratories can provide broadband, high-frequency amplification never before possible with transistors. The big leap in frequency is made possible by a diffusion process that earlier enabled Laboratories scientists to create the Bell Solar Battery.
This transistor is a 3-laver semi-conductor “sandwich.” High-frequency operation is obtained by making the central layer exceedingly thin. This was difficult to do economically by any known method.
The new diffusion process, however, easily produces microscopic layers of controllable thickness. Thus it opens the way to the broad application of high-frequency transistors for use in telephony, FM, TV, guided missiles, electronic brains and computers.
The new transistor shows once again how Bell Laboratories creates significant advances and then develops them into ever more useful tools for telephony and the nation.
(A Bell scientist checks temperature as arsenic vapor diffuses into germanium, creating 4/100,000-in. layer.)
BELL TELEPHONE LABORATORIES
IMPROVING AMERICA'S TELEPHONE SERVICE PROVIDES CAREERS FOR CREATIVE MEN IN SCIENTIFIC AND TECHNICAL FIELDS

Tag: transistor,bell laboratories,